• DocumentCode
    1653329
  • Title

    Investigation of localized breakdown spots in thin SiO2 using scanning capacitance microscopy

  • Author

    Wang, S.D. ; Chang, M.N. ; Chen, C.Y. ; Lei, T.F.

  • Author_Institution
    Inst. of Electron., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
  • fYear
    2005
  • Firstpage
    622
  • Lastpage
    623
  • Keywords
    MIS devices; MOS capacitors; capacitance; scanning probe microscopy; silicon compounds; surface morphology; MOS capacitor; MOS devices; SiO2; contact-mode atomic force microscopy images; differential capacitance signals; localized breakdown spots; metal-oxide-semiconductor devices; oxide breakdown sites; scanning capacitance microscopy; scanning probe microscope; surface morphology; thin silica; Atomic force microscopy; Capacitance; Electric breakdown; Laboratories; MOS capacitors; Maintenance; Rough surfaces; Surface morphology; Surface roughness; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493173
  • Filename
    1493173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653329