1653381

Effects of post metallization annealing on the electrical reliability of ultra-thin HfO₂ films with MoN and WN gate electrodes

Chatterjee, S. ; Kuo, Y. ; Lu, J. ; Tewg, J.-Y. ; Majhi, P.

Thin Film Nano & Microelectron. Res. Lab., Texas A&M Univ., College Station, TX, USA

2005

626

627

MIS devices; annealing; dielectric thin films; diffusion barriers; electron traps; hafnium compounds; interface states; leakage currents; molybdenum compounds; semiconductor device breakdown; semiconductor device reliability; tungsten compounds; tunnelling; CMOS device scaling; Joule heating; MOS capacitor; MOSFET; MoN-HfO₂; SILC; WN-HfO₂; critical trap density; diffusion barrier; electrical stress; electron traps; gate electrode materials; gate oxide layer conductive path; hard breakdown; high-k dielectrics; interface states; leakage spots lateral propagation; oxide layer tunneling current; post metallization annealing effects; refractory metal nitrides; soft breakdown; stress induced leakage current; ultra-thin dielectric film electrical reliability; Annealing; Current measurement; Electrodes; Electron traps; Hafnium oxide; Leakage current; MOS capacitors; Metallization; Stress; Temperature;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493175

1493175