1653426

Influence of gate material and stress voltage on post breakdown leakage current of high K dielectrics

Duschl, Rainer ; Kerber, M. ; Schroeder, U. ; Hecht, T. ; Jakschik, S. ; Kapteyn, C. ; Kudelka, S.

Infineon Technol., Munich, Germany

2005

632

633

circuit reliability; dielectric thin films; electric breakdown; leakage currents; Al₂O₃; DC dielectric reliability testing; SILC; breakdown formation finite threshold energy; electrode material; gate material effects; high-k dielectrics reliability; layer thickness; metal electrodes; post breakdown current limitation; post breakdown leakage current; stable breakdown phases; stress voltage effects; Breakdown voltage; Capacitors; Dielectric breakdown; Electrodes; FETs; High K dielectric materials; High-K gate dielectrics; Leakage current; Stress; Tin;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493178

1493178