Title :
Spin transport in single- and multi-layer graphene
Author :
Shiraishi, Masashi
Author_Institution :
Grad. Sch. of Eng. Sci., Osaka Univ., Toyonaka, Japan
Abstract :
In this talk, the author introduced novel findings on spin transport in graphene spin valves. It is found out that spin polarization of injected spins in graphene is very robust for a bias voltage and it is extremely better than that of the other molecular and metallic spin valves, which could be an important breakthrough for expanding device designing for realization of graphene-based spin MOSFETs.
Keywords :
MOSFET; graphene; magnetoelectronics; spin polarised transport; spin valves; spin-orbit interactions; C; field effect transistors; graphene electronics; graphene spin valves; multilayer graphene; nuclear spin; single-layer graphene; spin MOSFET; spin current; spin injection; spin polarization; spin transport; spin-orbit interaction; Anisotropic magnetoresistance; Electrodes; FETs; Magnetic field measurement; Polarization; Robustness; Spin polarized transport; Spin valves; Tunneling magnetoresistance; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424377
