1653447

Threshold voltage instability of HFSiO dielectric MOSFET under pulsed stress

Choi, Rino ; Harris, R. ; Lee, B.H. ; Young, C.D. ; Sim, J.H. ; Matthews, K. ; Pendley, M. ; Bersuker, G.

SEMATECH, Austin, TX, USA

2005

634

635

MOSFET; dielectric relaxation; dielectric thin films; hafnium compounds; semiconductor device measurement; semiconductor device reliability; 10E-1 sec; AC stress on/off time; HfSiO; MOSFET; NMOSFET; charge distribution stability; charge redistribution; charge trapping; high-k gate dielectrics; off-time relaxation; pulsed stress reliability test; stress rise/fall time; threshold voltage instability; Circuit simulation; Dielectric devices; Frequency; Hafnium; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Pulse circuits; Stress; Threshold voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493179

1493179