1653467

Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack

Choi, Rino ; Lee, B.H. ; Young, C.D. ; Sim, J.H. ; Mathews, K. ; Bersuker, C. ; Zeitzoff, P.

SEMATECH, Austin, TX, USA

2005

636

637

MOSFET; dielectric thin films; electron traps; elemental semiconductors; hafnium compounds; leakage currents; semiconductor device reliability; silicon; NMOS transistors; NMOSFET gate stack; Si-HfSiO; charge trapping; degradation polarity dependence; gate leakage; high-k dielectric reliability; interface defects; interface degradation; negative gate bias stress; positive bias stress; stress-induced dielectric wearout; substrate injection; subthreshold swing degradation; threshold voltage shift; trapped electrons; Annealing; Degradation; Dielectric substrates; Electron traps; Gate leakage; High-K gate dielectrics; Interface states; MOSFET circuits; Stress; Threshold voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493180

1493180