DocumentCode
1653505
Title
Comparison of hot carrier stress and constant voltage stress in hf-sificate NMOS transistors with poly and TiN gate stack
Author
Sim, J.H. ; Lee, B.H. ; Song, S.C. ; Young, C.D. ; Choi, R. ; Harris, H. Rusty ; Bersuker, G.
Author_Institution
SEMATECH, Austin, TX, USA
fYear
2005
Firstpage
638
Lastpage
639
Keywords
MOSFET; dielectric thin films; electron traps; elemental semiconductors; hafnium compounds; hole traps; hot carriers; impact ionisation; silicon; titanium compounds; CVS; NMOS transistors; NMOSFET; Si-HfSiO; TiN-HfSiO; accumulated HCS induced degradation; constant voltage stress; high-k dielectric gate stack; hole generation/trapping process; hot carrier injection; hot carrier stress; impact ionization; permanent dielectric damage; poly gate electrode; reversible charge trapping induced degradation; reversible electron trapping; stress bias dependant positive charge; threshold voltage shift; Degradation; Dielectric devices; Electron traps; High K dielectric materials; High-K gate dielectrics; Hot carriers; MOSFETs; Stress; Threshold voltage; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493181
Filename
1493181
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