Title :
3-terminal nanoelectromechanical switching device in insulating liquid media for low voltage operation and reliability improvement
Author :
Lee, Jeong-Oen ; Kim, Min-Wu ; Ko, Seung-Deok ; Kang, Hee-Oh ; Bae, Woo-Ho ; Kang, Min-Ho ; Kim, Ki-Nam ; Yoo, Dong-Eun ; Yoon, Jun-Bo
Author_Institution :
Sch. of EECS, KAIST, Daejeon, South Korea
Abstract :
A nanoelectromechanical (NEM) switching device is developed with a new technique involving a liquid medium. Operation voltage is reduced by about 40% and the number of switching cycles with reliable device performance is improved dramatically, more than 5-fold. The device has a 50 nm thick TiN cantilever with a 40 nm air-gap. A CMOS compatible process is employed.
Keywords :
CMOS integrated circuits; cantilevers; integrated circuit reliability; low-power electronics; nanoelectromechanical devices; nanofabrication; switches; 3-terminal nanoelectromechanical switching; CMOS compatible process; NEM device; air-gap; cantilever; insulating liquid media; low voltage operation; operation voltage; reliability improvement; reliable device performance; switching cycles; Dielectric liquids; Electrodes; Insulation; Low voltage; Nanoelectromechanical systems; Nanoscale devices; Nonvolatile memory; Packaging; Switches; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424380
