• DocumentCode
    1653523
  • Title

    Effects of high-k post-deposition cleaning in improving CMOS bias instabilities and mobility: a potential issue in reliability of dual metal gate technology

  • Author

    Akbar, M.S. ; Moumen, Naim ; Barnett, Joel ; Byoung-Hun Lee ; Lee, Byoung-Hun

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    2005
  • Firstpage
    640
  • Lastpage
    641
  • Keywords
    MOSFET; carrier mobility; dielectric thin films; electron traps; hole traps; interface states; leakage currents; semiconductor device reliability; surface cleaning; CMOS bias instabilities; CMOS device mobility; H2; H2O; HCl; HfSiO; bulk traps; charge trapping; dielectric deposition; dual metal gate technology reliability; high-k post-deposition cleaning; interface states; interface traps; leakage current; Annealing; CMOS technology; Cleaning; Electrodes; High K dielectric materials; High-K gate dielectrics; Interface states; MOS devices; Pulse measurements; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493182
  • Filename
    1493182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653523