4-terminal relay technology for complementary logic

Author

Nathanael, Rhesa ; Pott, Vincent ; Kam, Hei ; Jeon, Jaeseok ; Liu, Tsu-Jae King

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

A 4-terminal (4T) relay technology is proposed for complementary logic circuit applications. The advantage of the 4T relay design is that it provides a means for electrically adjusting the switching voltage; as a result, a 4T relay can mimic the operation of either an n-channel or p-channel MOSFET. Fabricated 4T relays exhibit good on-state current (I_on > 700 Â¿A for V_DS = 1 V) and zero off-state leakage current. Low-voltage switching (< 2 V) and low switching delay (100 ns) are demonstrated by appropriately biasing the body terminal. Endurance exceeds 10⁹ on/off cycles without stiction or wear issues. Complementary operation is demonstrated in a functional relay inverter circuit.

Keywords

MOSFET; leakage currents; logic circuits; relays; 4-terminal relay technology; complementary logic circuit applications; functional relay inverter circuit; low switching delay; low-voltage switching; n-channel MOSFET; on-state current; p-channel MOSFET; switching voltage; voltage 1 V; zero off-state leakage current; CMOS technology; Digital relays; Electrodes; Inverters; Leakage current; Logic circuits; MOSFET circuits; Magnetic materials; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424383

Filename

5424383