Title :
4-terminal relay technology for complementary logic
Author :
Nathanael, Rhesa ; Pott, Vincent ; Kam, Hei ; Jeon, Jaeseok ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
A 4-terminal (4T) relay technology is proposed for complementary logic circuit applications. The advantage of the 4T relay design is that it provides a means for electrically adjusting the switching voltage; as a result, a 4T relay can mimic the operation of either an n-channel or p-channel MOSFET. Fabricated 4T relays exhibit good on-state current (Ion > 700 ¿A for VDS = 1 V) and zero off-state leakage current. Low-voltage switching (< 2 V) and low switching delay (100 ns) are demonstrated by appropriately biasing the body terminal. Endurance exceeds 109 on/off cycles without stiction or wear issues. Complementary operation is demonstrated in a functional relay inverter circuit.
Keywords :
MOSFET; leakage currents; logic circuits; relays; 4-terminal relay technology; complementary logic circuit applications; functional relay inverter circuit; low switching delay; low-voltage switching; n-channel MOSFET; on-state current; p-channel MOSFET; switching voltage; voltage 1 V; zero off-state leakage current; CMOS technology; Digital relays; Electrodes; Inverters; Leakage current; Logic circuits; MOSFET circuits; Magnetic materials; Switches; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424383
