DocumentCode
1653615
Title
Silicon spintronics: Spin injection, manipulation and electrical detection
Author
Jonker, Berend T. ; van ´t Erve, O.M. ; Kioseoglou, George ; Hanbicki, Aubrey T. ; Li, Connie H. ; Holub, Michael ; Awo-Affouda, Chaffra ; Thompson, Phillip E.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
2009
Firstpage
1
Lastpage
2
Abstract
We have demonstrated the injection, modulation and detection of pure spin diffusion current in silicon in a lateral transport geometry compatible with existing device design, fabrication and scaling. This approach injects spin-polarized electrons near the silicon conduction band edge with near unity conversion efficiency and low bias voltages (~ 2 eV) compatible with CMOS technology.
Keywords
magnetoelectronics; silicon; CMOS technology; electrical detection; lateral transport geometry; modulation; near unity conversion efficiency; pure spin diffusion current; silicon conduction band edge; silicon spintronics; spin injection; spin polarized electrons; Aluminum oxide; Contacts; Electrons; Iron; Magnetic analysis; Magnetoelectronics; Optical films; Optical polarization; Silicon; Spin polarized transport;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4244-5639-0
Electronic_ISBN
978-1-4244-5640-6
Type
conf
DOI
10.1109/IEDM.2009.5424384
Filename
5424384
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