• DocumentCode
    1653619
  • Title

    Charge trapping by oxygen-related defects in HfO2-based high-k gate dielectrics

  • Author

    Yamabe, K. ; Goto, M. ; Higuchi, K. ; Uedono, A. ; Shiraishi, K. ; Miyazaki, S. ; Torii, K. ; Boero, M. ; Chikyow, T. ; Yamasaki, S. ; Kitajima, H. ; Yamada, K. ; Arikado, T.

  • Author_Institution
    Tsukuba Univ., Ibaraki, Japan
  • fYear
    2005
  • Firstpage
    648
  • Lastpage
    649
  • Keywords
    MOSFET; dielectric thin films; electron traps; hafnium compounds; hole traps; leakage currents; relaxation; HfAlOx; MOSFET; balanced injection; capacitance change; carrier separation method; constant voltage stress; defect induced charge trapping; electron flow; electron/hole-trapping centers; field-effect transistor structures; high-k gate dielectrics; hole flow; hole traps; injected electron traps; leakage current time-dependence; relaxation; Annealing; Charge carrier processes; Electron traps; FETs; Hafnium oxide; High-K gate dielectrics; Leakage current; MOS capacitors; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493186
  • Filename
    1493186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653619