Author :
Yamabe, K. ; Goto, M. ; Higuchi, K. ; Uedono, A. ; Shiraishi, K. ; Miyazaki, S. ; Torii, K. ; Boero, M. ; Chikyow, T. ; Yamasaki, S. ; Kitajima, H. ; Yamada, K. ; Arikado, T.
Keywords :
MOSFET; dielectric thin films; electron traps; hafnium compounds; hole traps; leakage currents; relaxation; HfAlOx; MOSFET; balanced injection; capacitance change; carrier separation method; constant voltage stress; defect induced charge trapping; electron flow; electron/hole-trapping centers; field-effect transistor structures; high-k gate dielectrics; hole flow; hole traps; injected electron traps; leakage current time-dependence; relaxation; Annealing; Charge carrier processes; Electron traps; FETs; Hafnium oxide; High-K gate dielectrics; Leakage current; MOS capacitors; Stress; Voltage;
