Title :
Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices
Author :
Marukame, Takao ; Inokuchi, Tomoaki ; Ishikawa, Mizue ; Sugiyama, Hideyuki ; Saito, Yoshiaki
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; ¿Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)¿ that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.
Keywords :
MOSFET; electron spin polarisation; ferromagnetic materials; field effect transistor switches; magnesium compounds; magnetic tunnelling; programmable logic devices; semiconductor storage; MgO; configuration memorization; ferromagnetic electrodes; nonvolatile memory; read-write operation; reconfigurable logic devices; spin based MOSFET; spin polarized current; spin polarized ferromagnet; spin transfer torque switching MOSFET; tunnel barrier; Current measurement; Electrical resistance measurement; Electrodes; Field programmable gate arrays; MOSFET circuits; Magnetic tunneling; Neodymium; Reconfigurable logic; Spin polarized transport; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424385
