DocumentCode :
1653656
Title :
Reliability failures due to charge injection in SOI under high voltage conditions
Author :
Bruggers, H. Jan ; Weijland-Emmerik, I.M. ; Rongen, R.T.H.
Author_Institution :
Philips Semicond. Consumer Syst. Nijmegen, Netherlands
fYear :
2005
Firstpage :
650
Lastpage :
651
Keywords :
charge injection; doping profiles; optimisation; power MOSFET; semiconductor device reliability; silicon-on-insulator; HV-PDMOST reliability; SOI; charge injection reliability failures; degradation phenomenon; doping profiles; drift region dimensions; drift region local electrical field conditions; drift region optimization; low-temperature high voltage conditions; Degradation; Doping; High intensity discharge lamps; Leakage current; Silicon on insulator technology; Space vector pulse width modulation; Stress; Temperature; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493187
Filename :
1493187
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1653656
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