Title :
Novel, 100V, Trench Super Junction high voltage TFTs using low temperature poly crystalline silicon
Author :
Dhyani, M.H. ; Green, D. ; Sweet, M. ; Narayanan, M. E Sankara ; Deane, S.C. ; Young, N.D.
Author_Institution :
Dept. of EEE, Sheffield Univ., Sheffield, UK
Abstract :
First results of 100 V, novel Trench Super Junction HVTFTs fully compatible to the LTPS technology are presented. They exhibit ON/OFF current ratio of more than 107 with sub-threshold swing of 0.75 V/decade and specific resistance (Rsp) of 40 ¿mm2.The influence of geometric parameters on both unipolar and bipolar devices is analysed.
Keywords :
cryogenic electronics; silicon; thin film transistors; LTPS technology; bipolar devices; geometric parameters; low temperature poly crystalline silicon; specific resistance; trench super junction high voltage TFT; unipolar devices; voltage 100 V; Costs; Crystallization; Displays; Electrodes; Fingers; Implants; Low voltage; Silicon; Temperature; Thin film transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424386
