Title :
Degradation of electromigration lifetime by post-annealing for CU/low-K interconnects
Author :
Kakuhara, Y. ; Ueno, K.
Author_Institution :
Adv. Device Dev. Div., NEC Electron. Corp., Sagamihara, Japan
Keywords :
annealing; copper; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; 130 nm; Cu; Cu/low-k interconnects; LSI; electromigration lifetime degradation; electromigration reliability; multilevel interconnect fabrication; post-plating annealing; total thermal processes; Annealing; Ceramics; Dielectrics; Electromigration; Electronic packaging thermal management; Fabrication; Life testing; National electric code; Performance evaluation; Thermal degradation;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493190
