Title :
A scaling scheme for interconnect in deep-submicron processes
Author :
Rahmat, K. ; Nakagawa, O.S. ; Oh, S.-Y. ; Moll, J. ; Lynch, W.T.
Author_Institution :
ULSI Lab., Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
In this paper, we study the requirements for interconnect in deep-submicron technologies and identify critical factors that will require innovations in process technology, process integration and circuit-and-system design techniques. We also propose a scaling scheme for global lines to optimize the interconnect for a given application domain such as microprocessors, ASICs or memory. For local interconnect we demonstrate that cross-talk is the major challenge which can be addressed by selectively using larger drivers to reduce cross-talk noise when necessary
Keywords :
crosstalk; integrated circuit interconnections; integrated circuit metallisation; integrated circuit noise; IC interconnect; crosstalk noise; deep-submicron processes; global lines; local interconnect; scaling scheme; Clocks; Crosstalk; Delay; Driver circuits; Frequency; Geometry; Integrated circuit interconnections; Integrated circuit technology; Semiconductor device noise; Technological innovation;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499188