DocumentCode
1653767
Title
A scaling scheme for interconnect in deep-submicron processes
Author
Rahmat, K. ; Nakagawa, O.S. ; Oh, S.-Y. ; Moll, J. ; Lynch, W.T.
Author_Institution
ULSI Lab., Hewlett-Packard Co., Palo Alto, CA, USA
fYear
1995
Firstpage
245
Lastpage
248
Abstract
In this paper, we study the requirements for interconnect in deep-submicron technologies and identify critical factors that will require innovations in process technology, process integration and circuit-and-system design techniques. We also propose a scaling scheme for global lines to optimize the interconnect for a given application domain such as microprocessors, ASICs or memory. For local interconnect we demonstrate that cross-talk is the major challenge which can be addressed by selectively using larger drivers to reduce cross-talk noise when necessary
Keywords
crosstalk; integrated circuit interconnections; integrated circuit metallisation; integrated circuit noise; IC interconnect; crosstalk noise; deep-submicron processes; global lines; local interconnect; scaling scheme; Clocks; Crosstalk; Delay; Driver circuits; Frequency; Geometry; Integrated circuit interconnections; Integrated circuit technology; Semiconductor device noise; Technological innovation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499188
Filename
499188
Link To Document