• DocumentCode
    1653767
  • Title

    A scaling scheme for interconnect in deep-submicron processes

  • Author

    Rahmat, K. ; Nakagawa, O.S. ; Oh, S.-Y. ; Moll, J. ; Lynch, W.T.

  • Author_Institution
    ULSI Lab., Hewlett-Packard Co., Palo Alto, CA, USA
  • fYear
    1995
  • Firstpage
    245
  • Lastpage
    248
  • Abstract
    In this paper, we study the requirements for interconnect in deep-submicron technologies and identify critical factors that will require innovations in process technology, process integration and circuit-and-system design techniques. We also propose a scaling scheme for global lines to optimize the interconnect for a given application domain such as microprocessors, ASICs or memory. For local interconnect we demonstrate that cross-talk is the major challenge which can be addressed by selectively using larger drivers to reduce cross-talk noise when necessary
  • Keywords
    crosstalk; integrated circuit interconnections; integrated circuit metallisation; integrated circuit noise; IC interconnect; crosstalk noise; deep-submicron processes; global lines; local interconnect; scaling scheme; Clocks; Crosstalk; Delay; Driver circuits; Frequency; Geometry; Integrated circuit interconnections; Integrated circuit technology; Semiconductor device noise; Technological innovation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499188
  • Filename
    499188