1653787

Determination of the acceleration factor between wafer level and package level electromigration test

Federspiel, X. ; Ney, D. ; Girault, V.

CR&D labs, Philips Semicond., Crolles, France

2005

658

659

copper; current density; electromigration; extrapolation; life testing; stress effects; temperature; Blech effect; Cu; Joule heating; acceleration factor; activation energy; current density; current density conditions; current exponent; extrapolated lifetime; numerical model; package level electromigration test; temperature gradient; wafer level electromigration test; Copper; Current density; Electromigration; Life estimation; Life testing; Packaging; Performance evaluation; Semiconductor device modeling; Thermal stresses; Wafer scale integration;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493191

1493191