DocumentCode
1653791
Title
Interconnect capacitances, crosstalk, and signal delay in vertically integrated circuits
Author
Kühn, Stefan A. ; Kleiner, Michael B. ; Ramm, Peter ; Weber, Werner
Author_Institution
Corp. Res. & Dev., Siemens AG, Munich, Germany
fYear
1995
Firstpage
249
Lastpage
252
Abstract
The impact of the three-dimensional circuit structure in Vertically Integrated Circuits (VICs) on interconnect capacitances, crosstalk and signal delay is investigated based on measurements and simulations. In comparison with planar IC technologies, increased substrate coupling and reduced coupling capacitances between adjacent interconnection lines considerably improve the noise immunity for VICs with chiplayers fabricated in silicon-bulk technology. For thin-film silicon-on-insulator chiplayers, noise immunity can be assured through the integration of conductive layers between active chips. The reduced interconnection lengths at system level lead to decreased interconnect delays despite higher total interconnect capacitances
Keywords
capacitance; crosstalk; delays; integrated circuit interconnections; integrated circuit noise; silicon-on-insulator; Si; Si bulk technology; crosstalk; interconnect capacitances; interconnect delays; noise immunity; signal delay; thin-film SOI chiplayers; three-dimensional circuit structure; vertically integrated circuits; Capacitance measurement; Coupling circuits; Crosstalk; Delay; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit noise; Integrated circuit technology; Semiconductor device measurement; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499189
Filename
499189
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