• DocumentCode
    1653791
  • Title

    Interconnect capacitances, crosstalk, and signal delay in vertically integrated circuits

  • Author

    Kühn, Stefan A. ; Kleiner, Michael B. ; Ramm, Peter ; Weber, Werner

  • Author_Institution
    Corp. Res. & Dev., Siemens AG, Munich, Germany
  • fYear
    1995
  • Firstpage
    249
  • Lastpage
    252
  • Abstract
    The impact of the three-dimensional circuit structure in Vertically Integrated Circuits (VICs) on interconnect capacitances, crosstalk and signal delay is investigated based on measurements and simulations. In comparison with planar IC technologies, increased substrate coupling and reduced coupling capacitances between adjacent interconnection lines considerably improve the noise immunity for VICs with chiplayers fabricated in silicon-bulk technology. For thin-film silicon-on-insulator chiplayers, noise immunity can be assured through the integration of conductive layers between active chips. The reduced interconnection lengths at system level lead to decreased interconnect delays despite higher total interconnect capacitances
  • Keywords
    capacitance; crosstalk; delays; integrated circuit interconnections; integrated circuit noise; silicon-on-insulator; Si; Si bulk technology; crosstalk; interconnect capacitances; interconnect delays; noise immunity; signal delay; thin-film SOI chiplayers; three-dimensional circuit structure; vertically integrated circuits; Capacitance measurement; Coupling circuits; Crosstalk; Delay; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit noise; Integrated circuit technology; Semiconductor device measurement; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499189
  • Filename
    499189