• DocumentCode
    1653809
  • Title

    Influence of diffusion barrier on reliability. Identification of diffusion paths in CU / porous low K interconnect

  • Author

    Guillaumond, J.F. ; Arnaud, Laurent ; Guedj, C. ; Arnal, V. ; Besling, W.F.A. ; Reimbold, C. ; Dupeux, M. ; Torres, J.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2005
  • Firstpage
    660
  • Lastpage
    661
  • Keywords
    copper; dielectric materials; diffusion barriers; electromigration; integrated circuit interconnections; integrated circuit reliability; porous materials; semiconductor device reliability; 0 to 45 nm; Cu; copper/porous low k interconnect; deposition process; diffusion barrier; diffusion paths; electromigration; liner thickness; metal barrier thickness; reliability; Atherosclerosis; Chemical vapor deposition; Copper; Dielectric materials; Electromigration; Grain boundaries; Research and development; Stress; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493192
  • Filename
    1493192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653809