Title :
InAlN/GaN heterostructures for microwave power and beyond
Author :
Kohn, E. ; Alomari, M. ; Denisenko, A. ; Dipalo, M. ; Maier, D. ; Medjdoub, F. ; Pietzka, C. ; Delage, S. ; diForte-Poisson, M.-A. ; Morvan, E. ; Sarazin, N. ; Jacquet, J.C. ; Dua, C. ; Carlin, J.-F. ; Grandjean, N. ; Py, M.A. ; Gonschorek, M. ; Kuzmik, J
Author_Institution :
Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany
Abstract :
InAlN/GaN is indeed an alternative to the common AlGaN/GaN heterostructure in electronics and sensing. It enables operation at extremely high temperature once problems with contact metallization and passivation have been solved. It is the only heterostructure known presently, which allows overgrowth of high quality diamond films to combine two of the most stable semiconductors. Thus, applications reach from high power microwaves systems and high temperature electronics to sensing in harsh environment.
Keywords :
III-V semiconductors; aluminium compounds; diamond; electrochemical sensors; gallium compounds; high-temperature electronics; indium compounds; microwave devices; power semiconductor devices; semiconductor heterojunctions; wide band gap semiconductors; InAlN-GaN; electrochemical ISFET sensor; heterostructures; high power microwaves systems; high quality diamond films; high temperature electronics; microwave power; sensing; Chemicals; FETs; Gallium nitride; Interface states; Lattices; Oxidation; Passivation; Robust stability; Thermal management; Transconductance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424395
