Title :
Normally-off 5A/1100V GaN-on-silicon device for high voltage applications
Author :
Boutros, K.S. ; Burnham, S. ; Wong, D. ; Shinohara, K. ; Hughes, B. ; Zehnder, D. ; McGuire, C.
Abstract :
We report the DC and switching performance of a normally-off 5 A/1100 V GaN-on-Si device. The device had a breakdown field of 95 V/¿m and a VB 2/Ron,sp of 272 MW/cm2. A 360 V/180 W boost converter was operated at 200 KHz, with an efficiency >92%. Respectively, these values are the highest for a normally-off GaN-on-Si device.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; high electron mobility transistors; power semiconductor devices; silicon; switching convertors; wide band gap semiconductors; DC performance; GaN-Si; GaN-on-silicon device; HEMT; boost converter; breakdown field; current 5 A; frequency 200 kHz; high voltage applications; power 180 W; switching performance; voltage 1100 V; voltage 360 V; Electric breakdown; Electrical resistance measurement; Gallium nitride; Power generation; Silicon; Substrates; Switches; Switching converters; Switching loss; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424396
