DocumentCode
1653927
Title
Dielectric engineering in nanocrystal memory devices for improved programming dynamics
Author
Lee, Jong Jin ; Bai, Wciping ; Kwong, Dim-Lee
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
2005
Firstpage
668
Lastpage
669
Keywords
dielectric devices; integrated memory circuits; nanostructured materials; random-access storage; Fowler-Nordheim programming regime; Si; control barrier; dielectric engineering; high-k dielectrics; nonvolatile memory; programming dynamics; programming instability; silicon nanocrystal memory device; Dielectric devices; Dynamic programming; Electrons; High K dielectric materials; High-K gate dielectrics; Nanocrystals; Nonvolatile memory; Silicon; Tunneling; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493196
Filename
1493196
Link To Document