Author :
Derluyn, J. ; Van Hove, M. ; Visalli, D. ; Lorenz, A. ; Marcon, D. ; Srivastava, P. ; Geens, K. ; Sijmus, B. ; Viaene, J. ; Kang, X. ; Das, J. ; Medjdoub, F. ; Cheng, K. ; Degroote, S. ; Leys, M. ; Borghs, G. ; Germain, M.
Abstract :
We describe the fabrication and characteristics of high voltage enhancement mode SiN/AlGaN/GaN/AlGaN double heterostructure FET devices. The Si3N4 not only acts as a passivation layer but is crucial in the device concept as it acts as an electron donating layer (1). By selective removal under the gate of the in-situ SiN, we realize e-mode operation with a very narrow threshold voltage distribution with an average value of +475 mV and a standard deviation of only 15 mV. Compared to the reference depletion mode devices, we see no impact of the e-mode architecture on the breakdown behaviour. The devices maintain very low leakage currents even at drain biases up to 80% of the breakdown voltage.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; passivation; semiconductor growth; semiconductor heterojunctions; silicon compounds; wide band gap semiconductors; Si3N4-AlGaN-GaN-AlGaN; breakdown voltage; double heterostructure FET devices; drain biases; e-mode DHFET; electron donating layer; high voltage enhancement mode; low leakage high breakdown; narrow threshold voltage distribution; passivation layer; reference depletion mode devices; selective removal; standard deviation; voltage 475 mV; Aluminum gallium nitride; Electric breakdown; Electrons; FETs; Fabrication; Gallium nitride; Leakage current; Passivation; Silicon compounds; Threshold voltage;
