Title :
Substrate-current-induced hot electron (SCIHE) injection: a new convergence scheme for flash memory
Author :
Hu, C.-Y. ; Kencke, D.L. ; Banerjee, S.K. ; Richart, R. ; Bandyopadhyay, B. ; Moore, B. ; Ibok, E. ; Garg, S.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A new convergence scheme is designed to achieve a fast speed, low power and highly reliable operation for existing flash EEPROM technology. By applying a substrate bias and lowering the drain voltage, the gate injection is found to move from Drain-Avalanche-Hot-Carrier (DAHC) injection to Substrate-Current-Induced Hot Electron (SCIHE) injection. Compared to the well-known DAHC convergence scheme, the new SCIHE scheme shortens the convergence time over a hundred times, reduces the total drain and substrate currents significantly for block convergence, and makes the device degradation negligible. Bias conditions are optimized for flash cells with medium channel doping of about 3×1017 cm-3, 0.85 μm gate length and 73 Å gate tunnel oxide to realize convergence times under 250 μs using this new low power scheme
Keywords :
EPROM; convergence; hot carriers; integrated memory circuits; EEPROM; SCIHE; block convergence; flash memory; gate injection; high speed low power operation; medium channel doping; reliability; substrate bias; substrate-current-induced hot electron injection; Convergence; Degradation; Doping; Drain avalanche hot carrier injection; Flash memory; Nonvolatile memory; Power dissipation; Substrate hot electron injection; Threshold voltage; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499197
