Title :
Power MOSFETs, IGBTs, and thyristors in SiC: Optimization, experimental results, and theoretical performance
Author :
Cooper, J.A. ; Tamaki, T. ; Walden, G.G. ; Sui, Y. ; Wang, S.R. ; Wang, X.
Author_Institution :
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
Abstract :
In this paper we present recent experimental results on SiC MOSFETs, IGBTs, and thyristors, and propose a consistent methodology for comparing unipolar and bipolar power devices as a function of blocking voltage and switching frequency.
Keywords :
insulated gate bipolar transistors; power MOSFET; silicon compounds; thyristors; wide band gap semiconductors; SiC; blocking voltage; insulated gate bipolar transistors; power MOSFET; switching frequency; thyristors; Current density; Insulated gate bipolar transistors; MOSFETs; Performance loss; Power dissipation; Silicon carbide; Substrates; Switching frequency; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424401
