• DocumentCode
    1654066
  • Title

    A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application

  • Author

    Zheng, X.F. ; Zhang, W.D. ; Govoreanu, B. ; Zhang, J.F. ; Van Houdt, J.

  • Author_Institution
    Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Electron trap energy distribution in the bulk of high-k materials is the essential information required for accurate retention prediction and fast material and processing optimization in Flash memory application. A new discharge-based multi-pulse technique (DMP) has been developed in this work, which, for the first time, gives this distribution across the bulk of high-k dielectric layer. Electron trap energy distributions in HfO2, Al2O3 and HfAlO stacks have been extracted and compared to identify the effects of material variation.
  • Keywords
    aluminium compounds; electron traps; flash memories; hafnium compounds; Al2O3; Flash memory application; HfAlO; HfO2; discharge-based multi-pulse technique; electron trap energy distribution; high-k dielectric layer; high-k materials; processing optimization; retention prediction; Aluminum oxide; Computational Intelligence Society; Electron traps; Energy states; Filling; Flash memory; High K dielectric materials; High-K gate dielectrics; Photonic band gap; Probes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424403
  • Filename
    5424403