1654172

Gettering effect of high-dose arsenic implantation and boron diffusion on gate oxide integrity in trench isolated high voltage silicon-on -insulator process

Lu, David H. ; Jimbo, Shinichi ; Fujishima, Naoto ; Wakimoto, Setsuko ; Ogino, Masaaki

Device Technol. Lab, Fuji Electr. Adv. Technol. Co., Ltd., Nagano, Japan

2005

684

685

arsenic; boron; buried layers; electric breakdown; getters; ion implantation; isolation technology; power integrated circuits; semiconductor doping; silicon-on-insulator; surface diffusion; As; B; HVIC; Si-SiO₂; bonded etched-back SOI wafers; buried oxide; dielectric breakdown; fully trench isolated high-voltage SOI; gate oxide integrity; gettering layout effects; high-dose implantation gettering effect; silicon-on-insulator process; surface diffusion; Boron; Design for quality; Dielectric breakdown; Etching; Gettering; Iron; Isolation technology; Silicon on insulator technology; Voltage; Wafer bonding;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493204

1493204