Title :
A 45nm generation Phase Change Memory technology
Author_Institution :
R&D Technol. Dev., Milan, Italy
Abstract :
A 45 nm generation PCM technology with an effective cell as small as 0.015 ¿m2 has been developed on a 1 Gb product. Good electrical properties and reliability results are reported, confirming that PCM has reached the maturity to become a mainstream technology for high density non-volatile memory applications.
Keywords :
integrated circuit reliability; phase change memories; high density non-volatile memory; integrated circuit reliability; memory size 1 GByte; phase change memory technology; size 45 nm; CMOS logic circuits; CMOS technology; Contact resistance; Copper; Lithography; Logic arrays; Phase change materials; Phase change memory; Research and development; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424409
