• DocumentCode
    1654178
  • Title

    A 45nm generation Phase Change Memory technology

  • Author

    Servalli, G.

  • Author_Institution
    R&D Technol. Dev., Milan, Italy
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A 45 nm generation PCM technology with an effective cell as small as 0.015 ¿m2 has been developed on a 1 Gb product. Good electrical properties and reliability results are reported, confirming that PCM has reached the maturity to become a mainstream technology for high density non-volatile memory applications.
  • Keywords
    integrated circuit reliability; phase change memories; high density non-volatile memory; integrated circuit reliability; memory size 1 GByte; phase change memory technology; size 45 nm; CMOS logic circuits; CMOS technology; Contact resistance; Copper; Lithography; Logic arrays; Phase change materials; Phase change memory; Research and development; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424409
  • Filename
    5424409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1654178