DocumentCode
1654186
Title
Copper via chain under etching process improvement
Author
Ji, Jackie ; Zhang, Mark ; Dong, Walden ; Guo, Annie ; Liang, Sanan ; Liao, Scott ; Niou, Chorng ; Chien, Kary
Author_Institution
Reliability Div., Semicond. Manuf. Int. Corp., Shanghai, China
fYear
2005
Firstpage
688
Lastpage
689
Keywords
etching; failure analysis; focused ion beam technology; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; transmission electron microscopy; Cu; FIB; OBIRCH; PVC; TEM; WAT test structure; dual damascene process; etching process improvement; failure analysis; fault isolation methods; focused ion beam; localized via chain under etching; optical beam induced resistance change; passive voltage contrast; transmission electron microscope; via chain open failures; wafer accept test; Aluminum; Conductivity; Copper; Etching; Fabrication; Failure analysis; Plasma applications; Scanning electron microscopy; Silicon compounds; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493206
Filename
1493206
Link To Document