• DocumentCode
    1654197
  • Title

    Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications

  • Author

    Seong, Dong-jun ; Park, Jubong ; Nodo Lee ; Hasan, Musarrat ; Jung, Seungjae ; Choi, Hyejung ; Joonmyoung Lee ; Jo, Minseok ; Wootae Lee ; Park, Sangsu ; Kim, Seonghyun ; Jang, Yun Hee ; Lee, Y. ; Sung, M. ; Kil, D. ; Hwang, Hyunsang ; Chung, S. ; Hong, S

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An in-depth study on the resistive switching mechanism of perovskite oxide based device was performed. Compared with filament type resistive switching device, excellent switching uniformity was obtained due to controlled redox reaction at metal/oxide interface. Electromigration of oxygen ion under the bipolar electric filed can explain the switching behavior. Formation of ultrathin AlOx at the interface can guarantee excellent retention characteristics at 125°C. Compared with the large area (50 × 50 um2) memory cell, the nanoscale device (¿=50 nm) showed better memory performance such as faster switching speed, better uniformity, endurance, and retention characteristics.
  • Keywords
    electrical resistivity; electromigration; metal-insulator boundaries; praseodymium compounds; random-access storage; Pr0.7Ca0.3MnO; bipolar electric filed; electromigration; filament type resistive switching device; interface engineering; memory cell; memory performance; metal/oxide interface; nanoscale device; nonvolatile memory applications; oxygen migration; perovskite oxide based device; reactive metal/polycrystalline; redox reaction; resistance switching behavior; resistive switching mechanism; retention characteristics; switching uniformity; ultrathin AlOx; Electric resistance; Electrodes; Materials science and technology; Nanoscale devices; Nonvolatile memory; Oxygen; Space vector pulse width modulation; Sputtering; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424410
  • Filename
    5424410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1654197