Title :
Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond
Author :
Annunziata, R. ; Zuliani, P. ; Borghi, M. ; De Sandre, G. ; Scotti, L. ; Prelini, C. ; Tosi, M. ; Tortorelli, I. ; Pellizzer, F.
Author_Institution :
STMicroelectronics, Agrate Brianza, Italy
Abstract :
A 90 nm embedded PCM technology is presented. For the first time the storage element has been integrated in a 6-ML advanced CMOS platform, exploiting the LV n-mos device as cell selector. Very good cell working window and intrinsic reliability both for storage element and selector MOS have been proven. The full integration of a 4 Mb ePCM macrocell with very few additional masks and minimal process tuning confirms this technology as a viable solution for floating gate non-volatile memory replacement in embedded applications.
Keywords :
CMOS integrated circuits; CMOS memory circuits; MIS devices; phase change memories; CMOS platform; LV n-mos device; cell selector; ePCM macrocell; embedded non volatile memory; phase change memory technology; size 90 nm; storage element; CMOS process; CMOS technology; Dielectrics; Low voltage; Macrocell networks; Material storage; Nonvolatile memory; Phase change materials; Phase change memory; Smart cards;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424413
