DocumentCode :
1654331
Title :
Chalcogenide PCM: a memory technology for next decade
Author :
Bez, Roberto
Author_Institution :
R&D Technol. Dev., Numonyx, Milan, Italy
fYear :
2009
Firstpage :
1
Lastpage :
4
Abstract :
Phase Change Memory (PCM) technology is demonstrating the capability to enter the broad memory market and to be a mainstream memory for the next decade. PCM provides a new set of features interesting for novel applications, combining components of NVM and DRAM and being at the same time a sustaining and a disruptive technology. In this paper the PCM technology status is reviewed and future development lines are drawn, showing that the technology maturity achieved, the scaling perspective and the broad application range allow predicting a key role for the PCM technology in the memory market in the next decade.
Keywords :
DRAM chips; phase change memories; DRAM; NVM; chalcogenide PCM; nonvolatile memory; phase change memory; Application software; Computer applications; Consumer electronics; Costs; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Research and development; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
Type :
conf
DOI :
10.1109/IEDM.2009.5424415
Filename :
5424415
Link To Document :
بازگشت