Growth and characterization of QDSL (Quantum Dots Superlattices) of metal silicides in an n-doped SiGe matrix for thermoelectric applications

Author

Silveira Stein, Sergio ; Savelli, G. ; Faucherand, P. ; Bernard-Granger, G. ; Montes, L.

Author_Institution

Thermoelectrics Lab., CEA-LITEN, Grenoble, France

fYear

2014

fDate

18-21 Aug. 2014

Firstpage

64

Lastpage

69

Abstract

We studied the growth of QDSLs (Quantum Dots Superlattices) made of Ti₅Si₃ quantum dots inside an “n” doped SiGe thin film matrix using a commercial Chemical Vapor Deposition (CVD) apparatus. To our knowledge, it is the first time these kinds of materials are produced. XRD, SEM and TEM images were employed to characterize the obtained materials. As predicted by the theory, the inclusion of these particles resulted on a reduction of the material´s thermal conductivity for monocrystalline samples. Moreover, a significant increase on the Seebeck coefficient was observed without increasing the electrical resistivity. By using these materials for thin film thermoelectric devices, an increase of the efficiency is expected when compared to SiGe thin films.

Keywords

Ge-Si alloys; Seebeck effect; X-ray diffraction; chemical vapour deposition; electrical resistivity; scanning electron microscopy; semiconductor quantum dots; semiconductor superlattices; thermal conductivity; transmission electron microscopy; CVD; QDSL growth; SEM; Seebeck coefficient; TEM; Ti₅Si₃; Ti₅Si₃ quantum dots; X-ray diffraction; XRD; chemical vapor deposition; electrical resistivity; material thermal conductivity; metal silicides; monocrystalline samples; n doped SiGe thin film matrix; n-doped SiGe matrix; particle inclusion; quantum dots superlattices; scanning electron microscopy; thermoelectric applications; thin film thermoelectric devices; transmission electron microscopy; Conductivity; Quantum dots; Silicon germanium; Surface treatment; Temperature measurement; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on

Conference_Location

Toronto, ON

Type

conf

DOI

10.1109/NANO.2014.6967964

Filename

6967964