DocumentCode
1654362
Title
Self-consistent Monte Carlo device simulations under nano-scale device structures: role of Coulomb interaction, degeneracy, and boundary condition
Author
Nakanishi, Kohei ; Uechi, Tadayoshi ; Sano, Nobuyuki
Author_Institution
Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan
fYear
2009
Firstpage
1
Lastpage
4
Abstract
The self-consistent 3D Monte Carlo device simulator including the full Coulomb interaction is constructed. We demonstrate that the boundary condition for the electron distribution function plays an essential role to obtain correct transport characteristics and that the Coulomb interaction is indeed a key ingredient for reliable predictions of device properties.
Keywords
MOSFET; Monte Carlo methods; boundary-value problems; nanostructured materials; semiconductor device models; Coulomb interaction; Monte Carlo device simulations; boundary condition; degeneracy; electron distribution function; nanoscale device structures; transport characteristics; Boundary conditions; Electrons; MOSFETs; Monte Carlo methods; Nanoscale devices; Nanostructures; Particle scattering; Plasma simulation; Surface fitting; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4244-5639-0
Electronic_ISBN
978-1-4244-5640-6
Type
conf
DOI
10.1109/IEDM.2009.5424417
Filename
5424417
Link To Document