Title :
Self-consistent Monte Carlo device simulations under nano-scale device structures: role of Coulomb interaction, degeneracy, and boundary condition
Author :
Nakanishi, Kohei ; Uechi, Tadayoshi ; Sano, Nobuyuki
Author_Institution :
Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan
Abstract :
The self-consistent 3D Monte Carlo device simulator including the full Coulomb interaction is constructed. We demonstrate that the boundary condition for the electron distribution function plays an essential role to obtain correct transport characteristics and that the Coulomb interaction is indeed a key ingredient for reliable predictions of device properties.
Keywords :
MOSFET; Monte Carlo methods; boundary-value problems; nanostructured materials; semiconductor device models; Coulomb interaction; Monte Carlo device simulations; boundary condition; degeneracy; electron distribution function; nanoscale device structures; transport characteristics; Boundary conditions; Electrons; MOSFETs; Monte Carlo methods; Nanoscale devices; Nanostructures; Particle scattering; Plasma simulation; Surface fitting; Surface resistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424417
