Title :
Quantum simulations of hole transport in Si, Ge, SiGe and GaAs double-gate pMOSFETs: orientation and strain effects
Author :
Cavassilas, Nicolas ; Ambrosio, Sophie D. ; Bescond, Marc
Author_Institution :
IM2NP, Marseille, France
Abstract :
We have developed a ballistic self-consistent code which couples the six-band k.p Hamiltonian to the Green function formalism. We investigate the influence of channel material (Si, Ge, SiGe and GaAs), crystallographic orientation ([100] and [110]) and strain (biaxial and uniaxial) on the ultimate double-gate pMOSFET performances. The results show that the best configuration is obtained with strained [100]-oriented Si devices.
Keywords :
Ge-Si alloys; Green´s function methods; III-V semiconductors; MOSFET; gallium arsenide; hole mobility; semiconductor device models; GaAs; Green function formalism; SiGe; ballistic self-consistent code; biaxial strain effects; crystallographic orientation; double-gate pMOSFET; hole transport; quantum simulations; uniaxial strain effects; Anisotropic magnetoresistance; Ballistic transport; Capacitive sensors; Crystalline materials; Crystallography; Gallium arsenide; Germanium silicon alloys; Green function; MOSFETs; Silicon germanium;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424418
