Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability

Author

Zhang, Xiao ; Li, Jing ; Grubbs, Melody ; Deal, Michael ; Magyari-Köpe, Blanka ; Clemens, Bruce M. ; Nishi, Yo-shio

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

A new model of work function variability (WFV) based on grain orientation differences of the polycrystalline metal gate is reported. Our model predicts that at the 22 nm technology node, among the three device variability sources: random dopant fluctuation (RDF), line edge roughness (LER) and WFV, WFV will cross over RDF and becomes the dominating factor. The SRAM circuit analysis shows that write/read failures are underestimated by 9 orders of magnitude by the area weighted averaged work function model.

Keywords

MOS integrated circuits; MOSFET; SRAM chips; integrated circuit metallisation; integrated circuit reliability; work function; SRAM reliability; dual metal gate MOSFET; grain orientation difference; metal grain work function variability; polycrystalline metal gate; size 22 nm; Charge carrier density; Circuit analysis; Electrodes; Fluctuations; High K dielectric materials; MOSFETs; Predictive models; Random access memory; Resource description framework; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424420

Filename

5424420