1654447

A new finding on NBTI lifetime model and an investigation on NBTI degradation characteristic for 1.2nm ultra thin oxide

Chia Lin Chen ; Lin, Y.M. ; Wang, Chingyue ; Wu, Kenneth

Reliability Assurance Div., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

2005

704

705

MOSFET; extrapolation; reaction-diffusion systems; semiconductor device models; semiconductor device reliability; thermal stability; 1.2 nm; NBTI degradation characteristics; NBTI lifetime prediction model; accelerated degradation factors; extrapolation; high field region power law model; hydrogen diffusion model; low field region E-model; negative bias temperature instability; nonsaturated degradation behavior; ultra thin oxide MOSFET; Acceleration; Degradation; Delay effects; Hydrogen; Niobium compounds; Predictive models; Stress; Time measurement; Titanium compounds; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493214

1493214