• DocumentCode
    1654447
  • Title

    A new finding on NBTI lifetime model and an investigation on NBTI degradation characteristic for 1.2nm ultra thin oxide

  • Author

    Chia Lin Chen ; Lin, Y.M. ; Wang, Chingyue ; Wu, Kenneth

  • Author_Institution
    Reliability Assurance Div., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
  • fYear
    2005
  • Firstpage
    704
  • Lastpage
    705
  • Keywords
    MOSFET; extrapolation; reaction-diffusion systems; semiconductor device models; semiconductor device reliability; thermal stability; 1.2 nm; NBTI degradation characteristics; NBTI lifetime prediction model; accelerated degradation factors; extrapolation; high field region power law model; hydrogen diffusion model; low field region E-model; negative bias temperature instability; nonsaturated degradation behavior; ultra thin oxide MOSFET; Acceleration; Degradation; Delay effects; Hydrogen; Niobium compounds; Predictive models; Stress; Time measurement; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493214
  • Filename
    1493214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1654447