1654461

New observations on the damage relaxation mechanisms in p-MOSFETs under dynamic NBTI stressing

Ang, D.S. ; Wang, S.

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

2005

706

707

MOSFET; dielectric relaxation; hole traps; interface states; semiconductor device reliability; thermal stability; NBTI induced positive charge trapping; damage recovery phenomenon; damage relaxation mechanisms; dynamic NBTI reliability; dynamic NBTI stressing; interface states; p-MOSFET; static stress; threshold voltage shift; two-stage relaxation behavior; unipolar stressing; Charge pumps; Degradation; Hydrogen; MOSFET circuits; Niobium compounds; Silicon compounds; Stress; Testing; Threshold voltage; Titanium compounds;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493215

1493215