Title :
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
Author :
Cheng, K. ; Khakifirooz, A. ; Kulkarni, P. ; Ponoth, S. ; Kuss, J. ; Shahrjerdi, D. ; Edge, L.F. ; Kimball, A. ; Kanakasabapathy, S. ; Xiu, K. ; Schmitz, S. ; Reznicek, A. ; Adam, T. ; He, H. ; Loubet, N. ; Holmes, S. ; Mehta, S. ; Yang, D. ; Upham, A. ;
Author_Institution :
IBM Res. at Albany Nanotech, Albany, NY, USA
Abstract :
We present a new ETSOI CMOS integration scheme. The new process flow incorporates all benefits from our previous unipolar work. Only a single mask level is required to form raised source/drain (RSD) and extensions for both NFET and PFET. Another new feature of this work is the incorporation of two strain techniques to boost performance, (1) Si:C RSD for NFET and SiGe RSD for PFET, and (2) enhanced stress liner effect coupling with faceted RSD. Using the new flow and the stress boosters we demonstrate NFET and PFET drive currents of 640 and 490 ¿A/¿m, respectively, at Ioff = 300 pA/¿m, VDD = 0.9V, and LG = 25 nm. Respectable device performance along with low GIDL makes these devices attractive for low power applications. Record low VT variability is achieved with AVt of 1.25 mV·¿m in our high-k/metal-gate ETSOI. The new process flow is also capable of supporting devices with multiple gate dielectric thicknesses as well as analog devices which are demonstrated with excellent transconductance and matching characteristics.
Keywords :
CMOS integrated circuits; Ge-Si alloys; carbon; elemental semiconductors; field effect transistors; silicon; silicon-on-insulator; system-on-chip; CMOS; NFET; PFET; RSD; Si:C; SiGe; enhanced stress liner effect coupling; extremely thin SOI; low power system-on-chip applications; matching characteristics; raised source/drain; single mask level; strain techniques; transconductance characteristics; Boron; CMOS technology; Dielectric devices; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; Implants; Power systems; Silicon germanium; Stress;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424422
