Title :
High power 4H-SiC static induction transistors
Author :
Siergiej, R.R. ; Clarke, R.C. ; Aganval, A.K. ; Brandt, C.D. ; Burk, A.A., Jr. ; Morse, A. ; Orphanos, P.A.
Author_Institution :
Sci. & Technol. Center, Westinghouse Electr. Corp., Pittsburgh, PA, USA
Abstract :
Static induction transistors have been demonstrated in 4H-SiC. SiC specific semiconductor processing technologies such as epitaxy, reactive ion etching, and sidewall Schottky gates were employed. Under pulsed power test conditions, 4H-SiC SITs developed a maximum output power of 225 W at 600 MHz, a power added efficiency of 47%, and a gain of 8.7 dB. Maximum channel current was 1 A/cm, and the maximum blocking voltage was 200 V
Keywords :
power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 200 V; 225 W; 47 percent; 4H-SiC; 600 MHz; 8.7 dB; RIE; SiC; epitaxy; high power SIT; pulsed power test conditions; reactive ion etching; sidewall Schottky gates; static induction transistors; Electric breakdown; Electron mobility; Gain; Geometry; Power generation; Silicon carbide; Space charge; Testing; Thermal conductivity; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499213
