DocumentCode
165452
Title
Synthesis and characterization of 2D layered materials: The case of hexagonal boron nitride
Author
Ismach, Ariel
Author_Institution
Dept. of Mater. Sci. & Eng., Tel Aviv Univ., Ramat Aviv, Israel
fYear
2014
fDate
18-21 Aug. 2014
Firstpage
898
Lastpage
899
Abstract
2D layered materials have attracted extensive interest in the scientific and technological communities due to the wide range of potential properties and thus applications these materials (and their combination) have. Despite the increased interest, the growth of such materials with desired properties remains highly challenging.
Keywords
III-V semiconductors; boron compounds; chemical vapour deposition; inhomogeneous media; semiconductor growth; semiconductor thin films; wide band gap semiconductors; 2D layered materials; BN; CVD; films; hexagonal boron nitride; Atomic layer deposition; Boron; Films; Graphene; Nickel; 2D materials; CVD; heterostructures; hexagonal boron nitride;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location
Toronto, ON
Type
conf
DOI
10.1109/NANO.2014.6967972
Filename
6967972
Link To Document