DocumentCode :
165452
Title :
Synthesis and characterization of 2D layered materials: The case of hexagonal boron nitride
Author :
Ismach, Ariel
Author_Institution :
Dept. of Mater. Sci. & Eng., Tel Aviv Univ., Ramat Aviv, Israel
fYear :
2014
fDate :
18-21 Aug. 2014
Firstpage :
898
Lastpage :
899
Abstract :
2D layered materials have attracted extensive interest in the scientific and technological communities due to the wide range of potential properties and thus applications these materials (and their combination) have. Despite the increased interest, the growth of such materials with desired properties remains highly challenging.
Keywords :
III-V semiconductors; boron compounds; chemical vapour deposition; inhomogeneous media; semiconductor growth; semiconductor thin films; wide band gap semiconductors; 2D layered materials; BN; CVD; films; hexagonal boron nitride; Atomic layer deposition; Boron; Films; Graphene; Nickel; 2D materials; CVD; heterostructures; hexagonal boron nitride;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
Type :
conf
DOI :
10.1109/NANO.2014.6967972
Filename :
6967972
Link To Document :
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