Title :
Strain metrology of devices by dark-field electron holography: A new technique for mapping 2D strain distributions
Author :
Hÿtch, Martin ; Hüe, Florian ; Houdellier, Florent ; Snoeck, Etienne ; Claverie, Alain
Author_Institution :
CEMES-CNRS, Toulouse, France
Abstract :
The authors present the latest results from the new technique of dark-field electron holography (HoloDark) which combines the advantages of the conventional transmission electron microscopy (TEM) with the precision of electron holography and is applicable to standard focused-ion beam (FIB) prepared samples. The authors will present measurements of strain in the active regions of a strained-silicon n-MOSFET device and a test structure for CESL induced strain.
Keywords :
MOSFET; electron holography; elemental semiconductors; focused ion beam technology; silicon; strain measurement; transmission electron microscopy; 2D strain distribution mapping; CESL induced strain; HoloDark; Si; TEM; contact etch stop layers; dark field electron holography; focused-ion beam; strain measurements; strain metrology; strained silicon n-MOSFET device; transmission electron microscopy; Capacitive sensors; Electron beams; Holography; Materials science and technology; Metrology; Probes; Spatial resolution; Strain measurement; Transmission electron microscopy; X-ray diffraction;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424424
