Title :
Electron transport properties in InAs self-assembled quantum dot HEMTs
Author :
Horiguchi, N. ; Futatsugi, T. ; Nakata, Y. ; Yokoyama, N.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
In this paper we propose InAs self-assembled quantum dot high electron mobility transistors (HEMTs) to investigate the electron transport properties in InAs self-assembled quantum dots. We measured the Vgs-Id characteristics, their temperature dependence and the Vds-Id characteristics. The experimental results show that the resonant tunneling via the quantum levels of InAs self-assembled quantum dots is modified by their charging energy
Keywords :
III-V semiconductors; carrier density; carrier mobility; high electron mobility transistors; indium compounds; quantum interference devices; semiconductor quantum dots; tunnelling; InAs; Vds-Id characteristics; Vgs-Id characteristics; charging energy; electron transport properties; high electron mobility transistor; resonant tunneling; self-assembled quantum dot HEMTs; temperature dependence; Assembly; Crystalline materials; Electrons; Gallium arsenide; HEMTs; MODFETs; Optical materials; Quantum dots; Resonant tunneling devices; US Department of Transportation;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499217
