1654546

Physical mechanism of NBTI relaxation by RF and noise performance of RF CMOS devices

Luo, Zhiyun ; Walko, Joseph P.

Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA

2005

712

713

MOSFET; flicker noise; interface states; semiconductor device noise; semiconductor device reliability; NBTI relaxation; NBTI stress; RF CMOS devices; dc performance; fixed charge; flicker noise degradation; interface charge; interface state relaxation; negative bias temperature instability; noise performance; oxide; 1f noise; Degradation; Interface states; MOSFET circuits; Niobium compounds; Noise measurement; Occupational stress; Radio frequency; Stress measurement; Titanium compounds;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493218

1493218