• DocumentCode
    1654546
  • Title

    Physical mechanism of NBTI relaxation by RF and noise performance of RF CMOS devices

  • Author

    Luo, Zhiyun ; Walko, Joseph P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
  • fYear
    2005
  • Firstpage
    712
  • Lastpage
    713
  • Keywords
    MOSFET; flicker noise; interface states; semiconductor device noise; semiconductor device reliability; NBTI relaxation; NBTI stress; RF CMOS devices; dc performance; fixed charge; flicker noise degradation; interface charge; interface state relaxation; negative bias temperature instability; noise performance; oxide; 1f noise; Degradation; Interface states; MOSFET circuits; Niobium compounds; Noise measurement; Occupational stress; Radio frequency; Stress measurement; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493218
  • Filename
    1493218
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1654546