DocumentCode :
1654565
Title :
MOSFET asymmetry and gate-drain/source overlap effects on hot carrier reliability
Author :
Aur, Shim ; Yang, Shyh-Homg ; Tran, Toan
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
2005
Firstpage :
714
Lastpage :
715
Keywords :
MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; 90 nm; MOSFET asymmetry; gate-drain/source overlap effects; hot carrier reliability; performance/reliability trade-off; Degradation; Doping profiles; Equations; Etching; Hot carriers; Implants; Instruments; MOSFET circuits; Neodymium; Surface fitting;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493219
Filename :
1493219
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1654565
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