Title :
Fabrication of InGaAs quantum nanodisks array by using bio-template and top-down etching processes
Author :
Yoshikawa, Kenichi ; Higo, Akio ; Lee, C.Y. ; Tamura, Yoshinobu ; Thomas, Cedric ; Kiba, Takayuki ; Ishii, Shin ; Sodabanlu, Hassanet ; Wang, Yannan ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Yamashita, Ichiro ; Murayama, Akihiro ; Samukawa, Seiji
Author_Institution :
Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
Abstract :
III-V compound semiconductor quantum dot (QD) optical devices, such as high-power lasers and high-speed modulators, have great potential for the future of telecommunications and quantum cryptographic communication. We developed a top-down method for fabricating InGaAs quantum nanodisks (NDs) arrays by using bio-template and neutral beam etching (NBE) processes. Damage-free InGaAs/GaAs nano-pillar structures were successfully fabricated for the first time. After NBE, InGaAs NDs were embedded in the GaAs barrier layer by metalorganic vapor phase epitaxy. Subsequently, the photoluminescence was measured and the emission originating from the NDs could be directly detected.
Keywords :
III-V semiconductors; MOCVD; etching; gallium arsenide; indium compounds; nanobiotechnology; nanofabrication; nanostructured materials; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; III-V compound semiconductor quantum dot optical devices; InGaAs-GaAs; barrier layer; biotemplate process; damage-free nanopillar structures; metalorganic vapor phase epitaxy; neutral beam etching process; photoluminescence; quantum nanodisks array; top-down etching processes; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Substrates; Temperature measurement;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6967975
