Title :
Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications
Author :
Chen, Kevin J. ; Maezawa, Koichi ; Yamamoto, Masafumi
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Abstract :
We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate
Keywords :
III-V semiconductors; frequency multipliers; high electron mobility transistors; indium compounds; logic gates; negative resistance devices; resonant tunnelling transistors; ternary logic; InP; InP-based RTHEMT; circuit applications; current-voltage characteristics; frequency multipliers; high electron mobility transistor; negative transconductance; resistor load; resonant-tunneling HEMT; resonant-tunneling diode structure; source region; source-drain bias; three-valued logic inverse literal gate; Circuits; Current-voltage characteristics; Diodes; Frequency; HEMTs; Logic gates; MODFETs; Resistors; Resonant tunneling devices; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499219
