A study on millisecond annealing (MSA) induced layout dependence for flash lamp annealing (FLA) and laser spike annealing (LSA) in multiple MSA scheme with 45 nm high-performance technology

Author

Miyashita, T. ; Kubo, T. ; Kim, Y.S. ; Nishikawa, M. ; Tamura, Y. ; Mitani, J. ; Okuno, M. ; Tanaka, T. ; Suzuki, H. ; Sakata, T. ; Kodama, T. ; Itakura, T. ; Idani, N. ; Mori, T. ; Sambonsugi, Y. ; Shimizu, A. ; Kurata, H. ; Futatsugi, T.

Author_Institution

Fujitsu Microelectron. Ltd., Kuwana, Japan

fYear

2009

Firstpage

1

Lastpage

4

Abstract

We investigated the dependence of temperature uniformity dufing millisecond annealing (MSA) on the pattern density and its effect on device characteristics and static random access memory (SRAM) yields with 45-nm node technology. By comparing flash lamp annealing (FLA) and laser spike annealing (LSA), we found FLA was difficult to use in our multiple MSA scheme without absorbing layers because of its high temperature uniformity sensitivity to pattern density. LSA was found to be more promising due to its lower sensitivity to pattern density and higher potential for enhancing performance. We also found hot spots were generated during LSA; however, these can easily be avoided by introducing LSA-friendly design rules.

Keywords

SRAM chips; incoherent light annealing; laser beam annealing; SRAM; absorbing layers; flash lamp annealing; laser spike annealing; layout dependence; millisecond annealing; pattern density; size 45 nm; static random access memory; temperature uniformity sensitivity; Degradation; Impurities; Lamps; Microelectronics; Optical microscopy; Random access memory; Rapid thermal annealing; SRAM chips; Temperature dependence; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424429

Filename

5424429