• DocumentCode
    1654661
  • Title

    In-situ Ga2O3 process for GaAs inversion/accumulation device and surface passivation applications

  • Author

    Passlack, Matthias ; Hong, Minghwei ; Mannaerts, Joseph P. ; Chu, S.N.G. ; Opila, Robert L. ; Moriya, Netzer

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1995
  • Firstpage
    383
  • Lastpage
    386
  • Abstract
    In-situ deposition of Ga2O3 films on clean, atomically ordered (100) GaAs surfaces has been investigated. Unique Ga 2O3-GaAs interface properties including an interface state density in the mid 1010 cm-2 eV -1 range and an interface recombination velocity of 4500 cm/s have been demonstrated. The formation of inversion layers in both n- and p-type GaAs has been clearly established. The Ga2O3-GaAs interface is characterized by thermodynamic and photochemical stability
  • Keywords
    III-V semiconductors; accumulation layers; electron-hole recombination; gallium arsenide; gallium compounds; interface states; inversion layers; passivation; semiconductor technology; semiconductor-insulator boundaries; (100) GaAs surface; Ga2O3 film; Ga2O3-GaAs; in-situ deposition; interface recombination velocity; interface state density; inversion/accumulation device; n-type GaAs; p-type GaAs; photochemical stability; surface passivation; thermodynamic stability; Electrons; Gallium arsenide; Interface states; Molecular beam epitaxial growth; Passivation; Surface cleaning; Surface reconstruction; Surface treatment; Thermodynamics; Vacuum systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499220
  • Filename
    499220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1654661