Title :
In-situ Ga2O3 process for GaAs inversion/accumulation device and surface passivation applications
Author :
Passlack, Matthias ; Hong, Minghwei ; Mannaerts, Joseph P. ; Chu, S.N.G. ; Opila, Robert L. ; Moriya, Netzer
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
In-situ deposition of Ga2O3 films on clean, atomically ordered (100) GaAs surfaces has been investigated. Unique Ga 2O3-GaAs interface properties including an interface state density in the mid 1010 cm-2 eV -1 range and an interface recombination velocity of 4500 cm/s have been demonstrated. The formation of inversion layers in both n- and p-type GaAs has been clearly established. The Ga2O3-GaAs interface is characterized by thermodynamic and photochemical stability
Keywords :
III-V semiconductors; accumulation layers; electron-hole recombination; gallium arsenide; gallium compounds; interface states; inversion layers; passivation; semiconductor technology; semiconductor-insulator boundaries; (100) GaAs surface; Ga2O3 film; Ga2O3-GaAs; in-situ deposition; interface recombination velocity; interface state density; inversion/accumulation device; n-type GaAs; p-type GaAs; photochemical stability; surface passivation; thermodynamic stability; Electrons; Gallium arsenide; Interface states; Molecular beam epitaxial growth; Passivation; Surface cleaning; Surface reconstruction; Surface treatment; Thermodynamics; Vacuum systems;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499220
